Standard Metallizations

Sputtering is commonly used because the adhesion of deposited metals is excellent. The basic bondable metallization scheme for thin-film substrates contains TiW as the adhesion layer and Au as the conductor layer (TiW/Au). When resistors are required Tantalum Nitride is added (TaN/TiW/Au). TaN is available from 10 to 200 Ohms/square sheet resistivities. Multi-Ohms per square films are also available on single circuit designs.

Solderable metallization shemes are also available by adding Ni and/or Cu to these films (TiW/Au/Cu/Ni/Au). Bondable and solderable metallization schemes can be achieved on a single design. Palladium can also be added as a solderable film when using high-temperature eutectics. Many different combinations are available for your design. Please consult with our sales department for more information.

 
Metal stack Solderable Wire Bondable Braze-able
Au/Sn or Au/Ge Pb/Sn or Sn/Cu1 >120µ" Au Au/Si
TiW/Au Yes Not Recommended Yes Run Out issue
TaN/TiW/Au Yes Not Recommended Yes Run Out issue
TiW/Pd/Au Yes Yes Yes Yes
TaN/TiW/Pd/Au Yes Yes Yes Yes
TiW/Ni/Au Yes Yes Yes Yes
TaN/TiW/Ni/Au Yes Yes Yes2 Yes
TiW/Au/Cu/Ni/Au Yes Yes Yes Yes
TaN/TiW/Au/Cu/Ni/Au Yes Yes Yes Yes
TiW/Au/Ni/Au Yes Yes Yes Yes
TiW/Au/Ni/Au Yes Yes Yes Yes

1 For die or wire attachment only.

2 Pb/Sn solderable and wire bondable on the same circuit can be achieved with special processes.

Note: Dicing through metals will typically cause burrs/tails and on polished materials could affect adhesion. Another solution ATP recommends to prevent these type of issues is by putting a pullback typical 0.001" (0.0254mm) in the design of the circuit. Inquire with ATP Sales for more information.


Metallizations Offered

Al = 20–500µ" (0.5–12.7µm)
Ti = 300–800Å (0.03–0.08µm)
TiW 90/10 = 300–800Å (0.03–0.08µm)
Cu = 20–1000µ" (0.5–25.4µm)
Cr = 300–800Å (0.03–0.08µm)
TaN = 10–200 Ohms/square are available.
50–75–100 Ohms/square standard.
Typical TCR = -100 ±50ppm/°C
 
Ni = 1,000–10,000Å (0.1–1.0µm)
Pd = 1,000–10,000Å (0.1–1.0µm)
Pt = 1,000–10,000Å (0.1–1.0µm)
Au = 20–500µ" (0.5–12.7µm)
Au/Sn = 160–240µ" (4.0–6.0µm)

Other metallizations and thicknesses are available. Please contact our sales department for information.

SEM Profile

SEM Profile

 
Metal Stack

Metal Stack

 
Layers

Layers

TiW/Au or TaN/TiW/Au

Bondable Gold

Typical Applications Conductor and resistor applications that require traditional processing
Advantages Cost effective standard assembly practices; can integrate TaN into the film; bondable
Disadvantages Not Pb/Sn compatible
Pb/Sn Solderability Poor
Allowble Die Attach Method Epoxies; Au/Ge eutectic; Au/Si eutectic; Au/Sn eutectic
Typical TCR -100 ±50ppm/°C
Recommended Front Side Metal

Sputtered 10–200 Ohms/sq TaN if resistors are required

Sputtered TiW: 300–800Å (0.03–0.08µm)

Sputtered Au: 20µ"–200µ", typical = 120µ" (0.5–5µm, typical = 3µm)

Plated Au: 20µ"–500µ", typical = 120µ" (0.5–12.7µm, typical = 3µm)

Backside Metal Same as front side without the TaN layer

TiW/Pd/Au or TaN/TiW/Pd/Au

Bondable Gold and Best Au/Si Eutectic Attach

Typical Applications Conductor - resistor applications that allow bonding and soldering
Advantages Best for Au/Si assemblies and limited eutectic leaching; can integrate TaN into the film
Au/Si Solderability Best
Pb/Sn Solderability Good
Allowble Die Attach Method Epoxies; Au/Si eutectic; Au/Sn eutectic; Au/Ge eutectic; Pb/Sn
Typical TCR -100 ±50ppm/°C
Recommended Front Side Metal

Sputtered 10–200 Ohms/sq TaN if resistors are required

Sputtered TiW: 300–800Å (0.03–0.08µm)

Sputtered Au: 20µ"–200µ", typical = 120µ" (0.5–5µm, typical = 3µm)

Sputtered Pd: 1000–1500Å (0.10–0.15µm)

Plated Au: 20µ"–500µ", typical = 120µ" (0.5–12.7µm, typical = 3µm)

Backside Metal Same as front side without the TaN layer

TiW/Ni/Au or TaN/TiW/Ni/Au

Bondable (TiW/Ni/Au only) or Solderable Gold (TiW/Ni/Au and TaN/TiW/Ni/Au)

Typical Applications Conductor applications that require Pb/Sn soldering
Advantages Solderable for Pb/Sn assemblies; can be bondable as long as TaN is not present
Disadvantages

Wire bonding problems may be experienced due to Ni-Au diffusion when devices processed > 300°C;

TaN is not recommended due to processing Ni-Au diffusion > 300°C

Pb/Sn Solderability Best for Pb/Sn assemblies
Allowble Die Attach Method Epoxies; Au/Si eutectic; Au/Sn eutectic; Au/Ge eutectic; Pb/Sn
Typical TCR -100 ±50ppm/°C
Recommended Front Side Metal

TaN is not recommended due to passivation above > 300°C, Ni diffusion

Sputtered TiW: 300–800Å (0.03–0.08µm)

Sputtered Ni: 1500–2000Å (0.15–0.2µm)

Sputtered Au: 20µ"–40µ" (0.5–1.0µm) for solderable thin gold

Plated Au: 20–500µ" (0.5–12.7µm) for bondable thicker gold

Backside Metal Same as front side without the TaN layer

TiW/Au/Cu/Ni/Au or TaN/TiW/Au/Cu/Ni/Au

Solderable/Bondable Gold

Typical Applications Conductor-resistor applications with high conductivity film that requires Pb/Sn soldering
Advantages

High conductivity film; can integrate TaN into the film;

Solderable Gold/Bondable Gold can be achieved on the same ciruit

Pb/Sn Solderability Best
Allowble Die Attach Method Epoxies; Au/Si eutectic; Au/Sn eutectic; Au/Ge eutectic; Pb/Sn
Typical TCR -100 ±50ppm/°C
Front Side Metal

Sputtered 10–200 Ohms/sq TaN if resistors are required

Sputtered TiW: 300–800Å (0.03–0.08µm)

Sputtered Au: 20–40µ" (0.5–1.0µm)

Electroplated Cu: 20–1,000µ" (0.5–25.4µm)

Electroplated Ni: 20–500µ" (0.5–12.7µm)

Electroplated Au: 20–500µ" (0.5–12.7µm) for solderable use thin gold, for bondable use thick gold

Backside Metal Same as front side without the TaN layer

TiW/Au/Ni/Au or TaN/TiW/Au/Ni/Au

Solderable/Bondable Gold

Typical Applications Conductor-resistor applications that require Pb/Sn soldering
Advantages

Best for Pb/Sn assemblies; can integrate TaN into the film;

Solderable Gold/Bondable Gold can be achieved on the same ciruit

Pb/Sn Solderability Best
Allowble Die Attach Method Epoxies; Au/Si eutectic; Au/Sn eutectic; Au/Ge eutectic; Pb/Sn
Typical TCR -100 ±50ppm/°C
Front Side Metal

Sputtered 10–200 Ohms/sq TaN if resistors are required

Sputtered TiW: 400–800 Ansgtroms

Sputtered Au: 20µ"–40µ" (0.5–1.0µm)

Electroplated Ni: 20–500µ" (0.5–12.7µm)

Electroplated Au: 20–500µ" (0.5–12.7µm) for solderable use thin gold, for bondable use thick gold

Backside Metal Same as front side without the TaN layer
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